Ion Implantation

Overview

Ion Implantation is an indispensible technology for the modern world. Every integrated circuit in every electronic device in the world has been through machines like ours dozens of times. Implanters have contributed significantly to the development of microelectronics, and are still doing so. Our Class 100 cleanroom is used continuously to support production processes and research projects for a wide variety of different devices.

But ion implantation also gives access to new materials and new surface treatments since implantation is an energetic process very far from equilibrium. We can (and do) implant (almost) anything with (almost) any element of the Periodic Table. We have made oxides, nitrides and silicides buried in single crystal silicon. Among the materials we have made are insulators, semiconductors (iron disilicide), metals (cobalt disilicide) and superconductors (magnesium diboride). Applications range from microwave and optical devices through biologically friendly (or unfriendly) surfaces to the basic physics of damage processes in nuclear materials.

If you want to modify the first micron or so at the surface of your material, then maybe we can help. Frustrated chemists are also welcome.

Facilities:

The Ion Beam Centre is equipped with:

A 2 MV High Energy Implanter (installed 1991)

• Many ions have been produced on this machine up to 4 MeV.  Beam currents up to 50 uA can be achieved in some cases but beam heating is a problem at these powers: a few uA is more typical!
• Up to 150 mm wafer compatible.
• Developments continue to improve both the range of ion species and the currents available.
• End station in clean room (class 100).
• Excellent mass resolution, beam purity and uniformity.

• Implants of a wide range of species are available between 2 keV and 400 keV.
• Up to 10 mA beam currents available for selected species.
• Two  beam lines, one dedicated to semiconductor samples (to 200 mm).
• Excellent mass resolution, beam purity and uniformity.
• End station in clean room (class 100).

• Any sample size up to 40 cm x 40 cm can be accommodated.
• Hot (1300 K) or cold (~100 K) implants can be performed.
• Sample chamber designed to allow in situ real time monitoring to be made.
• Sample holders can be fully customised depending upon the needs of the project.

• Energy range: 35 keV to 100 eV.
• Implant area: 10 mm x 10 mm.
• Maximum sample size: 12 mm x 12 mm.
• Ion species: B, Si, P, As, Sb, Cu, Ni, Al.
• UHV target chamber.